A Caltech Library Service

Design and implementation of the next generation electron beam resists for the production of EUVL photomasks

Lewis, Scott M. and DeRose, Guy A. and Alty, Hayden R. and Hunt, Matthew S. and Li, Jarvis and Werthiem, Alex and Fowler, Trevor and Lee, Sang Kook and Muryn, Christopher A. and Timco, Grigore A. and Scherer, Axel and Yeates, Stephen G. and Winpenny, Richard E. P. (2018) Design and implementation of the next generation electron beam resists for the production of EUVL photomasks. In: Photomask Technology 2018. Proceedings of SPIE. No.10810. Society of Photo-optical Instrumentation Engineers (SPIE) , Bellingham, WA, Art. No. 108100N. ISBN 9781510622159.

[img] PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


A new class of resist materials has been developed that is based on a family of heterometallic rings. The work is founded on a Monte Carlo simulation that utilizes a secondary and Auger electron generation model to design resist materials for high resolution electron beam lithography. The resist reduces the scattering of incident electrons to obtain line structures that have a width of 15 nm on a 40 nm pitch. This comes at the expense of lowering the sensitivity of the resist, which results in the need for large exposure doses. Low sensitivity can be dramatically improved by incorporating appropriate functional alkene groups around the metal-organic core, for example by replacing the pivalate component with a methacrylate molecule. This increases the resist sensitivity by a factor of 22.6 and demonstrates strong agreement between the Monte Carlo simulation and the experimental results. After the exposure and development processes, what remains of the resist material is a metal-oxide that is extremely resistant to silicon dry etch conditions; the etch selectivity has been measured to be 61:1.

Item Type:Book Section
Related URLs:
URLURL TypeDescription
Lewis, Scott M.0000-0002-4183-1906
Winpenny, Richard E. P.0000-0002-7101-3963
Additional Information:© 2018 Society of Photo-optical Instrumentation Engineers (SPIE). We acknowledge the EPSRC(UK) for funding (grant EP/R023158/1). The University of Manchester also supported this work. The authors gratefully acknowledge critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
Engineering and Physical Sciences Research Council (EPSRC)EP/R023158/1
University of ManchesterUNSPECIFIED
Kavli Nanoscience InstituteUNSPECIFIED
Subject Keywords:Metal Organic electron beam resist, electron beam lithography, 3D Secondary and Auger electron Monte Carlo Simulation
Series Name:Proceedings of SPIE
Issue or Number:10810
Record Number:CaltechAUTHORS:20190117-111919486
Persistent URL:
Official Citation:Scott M. Lewis, Guy A. DeRose, Hayden R. Alty, Matthew S. Hunt, Jarvis Li, Alex Werthiem, Trevor Fowler, Sang Kook Lee, Christopher A. Muryn, Grigore A. Timco, Axel Scherer, Stephen G. Yeates, Richard E. P. Winpenny, "Design and implementation of the next generation electron beam resists for the production of EUVL photomasks," Proc. SPIE 10810, Photomask Technology 2018, 108100N (3 October 2018); doi: 10.1117/12.2501808
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:92345
Deposited By: Tony Diaz
Deposited On:17 Jan 2019 21:31
Last Modified:16 Nov 2021 03:49

Repository Staff Only: item control page