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XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces

Beach, R. A. and Piquette, E. C. and McGill, T. C. (1999) XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces. MRS Internet Journal of Nitride Semiconductor Research, 4 (S1). Art. No. G6.26. ISSN 1092-5783.

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The incorporation of oxygen onto the (3x3) reconstructed surface of GaN(0001) has been studied using X-ray Photoelectron Spectroscopy (XPS). It was found that the (3x3) reconstruction corresponds to a fractional Ga adlayer atop a Ga terminated GaN surface. Our measurements indicate a surface coverage of 1.15 ± 0.2 monolayers of relaxed Ga on the surface. The binding energy separation between the relaxed surface Ga3d core level and bulk Ga3d level was measured to be 1.1 ± 0.1 eV. A metallic component extending from the bulk GaN valence band maximum out to 0 eV was also present in the XPS spectrum. The separation between the bulk valence band maximum and the Fermi level of the metallic component was found to be 2.1 ± 0.1 eV. The relaxation of the surface Ga was found to decrease with oxygen exposure indicating Ga-O bonding, with oxygen adsorption terminating at 1.3 ± 0.2 monolayers. The O1s core level was found to have a FWHM of 2.0 ± 0.1 eV.

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Additional Information:© 1999 The Materials Research Society. This work was supported by DARPA and monitored by the ONR under Grant N00014-92-J-1845. This article was presented as part of Symposium G, "Gallium Nitride and Related Alloys" at the 1998 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 30-December 4.
Issue or Number:S1
Record Number:CaltechAUTHORS:BEAmrsijnsr99
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Official Citation:Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G6.26 (1999).
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9317
Deposited By: Archive Administrator
Deposited On:12 Dec 2007
Last Modified:02 Oct 2019 23:59

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