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Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars

Scofield, A. C. and Kim, S.-H. and Shapiro, J. N. and Lin, A. and Liang, B. L. and Scherer, A. and Huffaker, D. L. (2011) Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars. In: 69th Device Research Conference. IEEE , Piscataway, NJ, pp. 1-2. ISBN 9781612842448. https://resolver.caltech.edu/CaltechAUTHORS:20190225-145230229

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Abstract

In this work, we present a method whereby the photonic band gap region and active gain regions are formed simultaneously by selective-area metal-organic chemical vapor deposition. This approach allows us the ability to design device parameters lithographically. By accurate control of position and diameter of the NPs, high-g cavities can be formed entirely with NPs. This particular model cavity supports a non-degenerate hexapole mode with a high overlap between the E-field and the center pillars. Design optimization by finite-difference time-domain simulations yields a cavity Q of ~5000.


Item Type:Book Section
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https://doi.org/10.1109/drc.2011.6086643DOIArticle
Additional Information:© 2011 IEEE.
Record Number:CaltechAUTHORS:20190225-145230229
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190225-145230229
Official Citation:A. C. Scofield et al., "Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars," 69th Device Research Conference, Santa Barbara, CA, 2011, pp. 1-2. doi: 10.1109/DRC.2011.6086643
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93236
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:25 Feb 2019 22:59
Last Modified:03 Oct 2019 20:52

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