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Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction

Li, Yajie and Wang, Pengfei and Meng, Fangyuan and Yu, Hongyan and Zhou, Xuliang and Wang, Huolei and Pan, Jiaoqing (2018) Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction. Semiconductors, 52 (16). pp. 2017-2021. ISSN 1063-7826. http://resolver.caltech.edu/CaltechAUTHORS:20190226-083531846

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Abstract

We experimentally investigate and analyze the electrical and optical characteristics of InGaAs/GaAs conventional quantum well laser diode and the quantum well laser diode with slightly-doped tunnel junction. It was found that the laser with slightly-doped tunnel junction has a nonlinear S-shape current-voltage characteristic. The internal quantum efficiencies of the laser with slightly-doped tunnel junction and the conventional laser are 21 and 87.3%, respectively. This suggests that the slightly-doped tunnel junction increased the barrier width and free carrier absorption, thus could reduce the electron tunneling probability and increase the internal loss. Furthermore, compared with the conventional laser, it was found that we could achieve 15 nm broadband spectrum from the laser with slightly-doped tunnel junction, due to the lasing dynamics reflecting the current dynamics. The results show that the slightly-doped tunnel junction plays a crucial role in the laser diode performances, which may lead to the realization of more applications.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1134/s1063782618160169DOIArticle
ORCID:
AuthorORCID
Wang, Huolei0000-0001-6245-8090
Additional Information:© 2018 Pleiades Publishing, Ltd. First Online: 26 February 2019. We thank all the teachers and students in the PIC group of the Key Laboratory of Semiconductor Materials Science for their help. The study was supported by the National Key Research and Development Program of China under grant no. 2017YFB0405301, and the National Natural Science Foundation of China under grant no. 61604144, grant no. 61504137.
Funders:
Funding AgencyGrant Number
National Key Research and Development Program of China2017YFB0405301
National Natural Science Foundation of China61604144
National Natural Science Foundation of China61504137
Subject Keywords:tunnel junction; multiple quantum well; semiconductor lasers
Record Number:CaltechAUTHORS:20190226-083531846
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20190226-083531846
Official Citation:Yajie Li, Wang, P., Meng, F. et al. Semiconductors (2018) 52: 2017. https://doi.org/10.1134/S1063782618160169
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93244
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:26 Feb 2019 16:42
Last Modified:26 Feb 2019 16:42

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