CaltechAUTHORS
  A Caltech Library Service

InAlAs epitaxial growth for wide band gap solar cells

Leite, Marina S. and Woo, Robyn L. and Hong, William D. and Law, Daniel C. and Atwater, Harry A. (2011) InAlAs epitaxial growth for wide band gap solar cells. In: 37th IEEE Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 780-783. ISBN 978-1-4244-9966-3. https://resolver.caltech.edu/CaltechAUTHORS:20190308-093425298

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20190308-093425298

Abstract

We demonstrate high quality InAlAs epitaxial growth by metalorganic vapor phase epitaxy and wide band gap solar cell fabrication. X-ray diffraction and transmission electron microscopy were used to characterize the crystalline quality of the epitaxial InAlAs grown. InAlAs solar cells lattice-matched to InP were grown and electrically characterized under AM 1.5 global 1-sun illumination. Window layers with different composition and, therefore, band gap energies were used to compare its effect on the overall device performance. In order to improve the electrical contact at the top window (Al-rich), an InGaAs cap layer was used. The resulting first generation of InAlAs solar cells showed an efficiency higher than 14 %, open circuit voltage of V_(oc) = 1 V, J_(sc) = 19.3 mA/cm^2, and maximum external quantum efficiency of 81%.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/PVSC.2011.6186070DOIArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2011 IEEE. The authors acknowledge financial support from the Department of Energy - Solar Energy Technologies Program under Grant No. DE-FG36-08GO18071. This work benefited from use of the Caltech Kavli Nanoscience Institute and the Material Science TEM facilities partially supported by the MRSEC Program of the National Science Foundation under Award Number DMR-0520565.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-FG36-08GO18071
NSFDMR-0520565
Record Number:CaltechAUTHORS:20190308-093425298
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190308-093425298
Official Citation:M. S. Leite, R. L. Woo, W. D. Hong, D. C. Law and H. A. Atwater, "InAlAs epitaxial growth for wide band gap solar cells," 2011 37th IEEE Photovoltaic Specialists Conference, Seattle, WA, 2011, pp. 000780-000783. doi: 10.1109/PVSC.2011.6186070
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93650
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:08 Mar 2019 18:28
Last Modified:03 Oct 2019 20:56

Repository Staff Only: item control page