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Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

Hasler, Paul and Andreou, Andreas G. and Diorio, Chris and Minch, Bradley A. and Mead, Carver A. (1998) Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport. VLSI Design, 8 (1-4). pp. 455-461. ISSN 0279-2834. https://resolver.caltech.edu/CaltechAUTHORS:HASvd98

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Abstract

We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1155/1998/73698DOIUNSPECIFIED
Additional Information:© 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (Received 28 May 1997) We thank K. Hess for several helpful comments and suggestions, and L. Dupre for editing this manuscript. Fifth International Workshop on Computational Electronics (IWCE-5), University of Notre Dame, South Bend, IN, May 28-30, 1997. Special issue, VLSI Design, vol. 8, nos. 1-4, http://www.hindawi.com/journals/vlsi/volume-8/
Subject Keywords:Impact ionization, hot electron injection, floating gate devices, silicon electron transport, MOSFET modeling
Issue or Number:1-4
Record Number:CaltechAUTHORS:HASvd98
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:HASvd98
Official Citation:Paul Hasler, Andreas G. Andreou, Chris Diorio, Bradley A. Minch, and Carver A. Mead, “Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport,” VLSI Design, vol. 8, no. 1-4, pp. 454-461, 1998. doi:10.1155/1998/73698
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9368
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:16 Dec 2007
Last Modified:02 Oct 2019 23:59

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