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GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Archer, Melissa J. and Law, Daniel C. and Mesropian, Shoghig and Boca, Andreea and Haddad, Moran and Ladous, Corinne and King, Richard R. and Atwater, Harry A. (2008) GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates. In: 33rd IEEE Photovoltaic Specialists Conference. IEEE , Piscataway, NJ, pp. 1-4. ISBN 9781424416400.

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In this study, we report synthesis of large area (> 2 cm^2) crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates.

Item Type:Book Section
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Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2008 IEEE. The authors would like to acknowledge the National Renewable Energy Laboratory through subcontract XAT-4-33624-10 for support of the Caltech and Spectrolab portions of this work. One of us (MJA) acknowledges fellowship support from the National Science Foundation. Support for TEM work was provided by the Caltech Kavli Nanoscience Institute and Materials Science TEM facilities supported by the MRSEC Program of the National Science Foundation under Award Number DMR-0520565.
Group:Kavli Nanoscience Institute
Funding AgencyGrant Number
National Renewable Energy LaboratoryXAT-4-33624-10
Kavli Nanoscience InstituteUNSPECIFIED
Record Number:CaltechAUTHORS:20190308-152332663
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Official Citation:M. J. Archer et al., "GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates," 2008 33rd IEEE Photovoltaic Specialists Conference, San Diego, CA, USA, 2008, pp. 1-4. doi: 10.1109/PVSC.2008.4922585
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93683
Deposited By: Tony Diaz
Deposited On:08 Mar 2019 23:37
Last Modified:16 Nov 2021 16:59

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