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Simulation of GaAs p-i-n diodes

Gopinath, A. and Atwater, H. (1988) Simulation of GaAs p-i-n diodes. IEEE Transactions on Electron Devices, 35 (4). pp. 414-417. ISSN 0018-9383. http://resolver.caltech.edu/CaltechAUTHORS:20190312-090512320

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Abstract

GaAs p-i-n diodes have been modeled using numerical simulation, and the theoretical results have been compared to those of experiment. The simulations predict that with a lifetime of the carriers of 10^(-7)s, devices that have good i-layer modulation may be built. This is in agreement with currently available commercial devices.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/16.2473DOIArticle
ORCID:
AuthorORCID
Atwater, H.0000-0001-9435-0201
Additional Information:© 1988 IEEE. Manuscript received August, 24, 1987; revised November 17, 1987. This work was sponsored by the Department of the Army.
Funders:
Funding AgencyGrant Number
U.S. ArmyUNSPECIFIED
Record Number:CaltechAUTHORS:20190312-090512320
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20190312-090512320
Official Citation:A. Gopinath and H. Atwater, "Simulation of GaAs p-i-n diodes," in IEEE Transactions on Electron Devices, vol. 35, no. 4, pp. 414-417, April 1988. doi: 10.1109/16.2473
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93723
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:12 Mar 2019 16:32
Last Modified:12 Mar 2019 16:32

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