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Ultra-high External Efficiency From Surface Textured Thin-film LEDs

Schnitzer, I. and Yablonovitch, E. and Ranganathan, R. and Arbet-Engels, V. and Scherer, A. (1994) Ultra-high External Efficiency From Surface Textured Thin-film LEDs. In: Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics. IEEE , Piscataway, NJ, pp. 3-4. ISBN 0-7803-1752-1. https://resolver.caltech.edu/CaltechAUTHORS:20190312-095911495

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Abstract

Dire need for high external quantum efficiency (η_(ext)) visible light-emitting-diodes (LED's) is clearly seen as the flat panel display technology is rapidly evolves. However, there is an enormous gap between the theoretical efficiency of LED's and their actual efficiency. It has been known that good quality III-V double heterostructures can have over 90% internal quantum yields (η) for direct band-gap compounds and over 99% for AlGaAs/GaAs/AlGaAs, as we have demonstrated recently. On the other hand, run-of-the-mill commercial LED's are usually only a few percent efficient (externally).


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/LEOSST.1994.700528DOIArticle
ORCID:
AuthorORCID
Yablonovitch, E.0000-0002-5724-3375
Additional Information:© 1994 IEEE.
Record Number:CaltechAUTHORS:20190312-095911495
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190312-095911495
Official Citation:I. Schnitzer, E. Yablonovitch, R. Ranganathan, V. Arbet-Engels and A. Scherer, "Ultra-high External Efficiency From Surface Textured Thin-film LEDs," Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics, Lake Tahoe, NV, USA, 1994, pp. 4_3-4_4. doi: 10.1109/LEOSST.1994.700528
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93728
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:12 Mar 2019 17:09
Last Modified:09 Mar 2020 13:19

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