A Caltech Library Service

Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction

Bogdanowicz, R. and Ficek, M. and Sobaszek, M. and Nosek, A. and Gołuński, Ł. and Karczewski, J. and Jaramillo-Botero, A. and Goddard, W. A., III and Bockrath, M. and Ossowski, T. (2019) Growth and Isolation of Large Area Boron-Doped Nanocrystalline Diamond Sheets: A Route toward Diamond-on-Graphene Heterojunction. Advanced Functional Materials, 29 (3). Art. No. 1805242. ISSN 1616-301X. doi:10.1002/adfm.201805242.

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item:


Many material device applications would benefit from thin diamond coatings, but current growth techniques, such as chemical vapor deposition (CVD) or atomic layer deposition require high substrate and gas‐phase temperatures that would destroy the device being coated. The development of freestanding, thin boron‐doped diamond nanosheets grown on tantalum foil substrates via microwave plasma‐assisted CVD is reported. These diamond sheets (measuring up to 4 × 5 mm in planar area, and 300–600 nm in thickness) are removed from the substrate using mechanical exfoliation and then transferred to other substrates, including Si/SiO_2 and graphene. The electronic properties of the resulting diamond nanosheets and their dependence on the free‐standing growth, the mechanical exfoliation and transfer processes, and ultimately on their composition are characterized. To validate this, a prototypical diamond nanosheet–graphene field effect transistor‐like (DNGfet) device is developed and its electronic transport properties are studied as a function of temperature. The resulting DNGfet device exhibits thermally activated transport (thermionic conductance) above 50 K. Below 50 K a transition to variable range hopping is observed. These findings demonstrate the first step towards a low‐temperature diamond‐based transistor.

Item Type:Article
Related URLs:
URLURL TypeDescription
Bogdanowicz, R.0000-0002-7543-2620
Jaramillo-Botero, A.0000-0003-2844-0756
Goddard, W. A., III0000-0003-0097-5716
Additional Information:© 2018 WILEY‐VCH. Received: July 30, 2018. Revised: October 26, 2018. Published online: November 22, 2018. The authors gratefully acknowledge the financial support from the Polish National Science Centre (NCN) under Grant Nos. 2015/16/T/ST7/00469, 2016/21/B/ST7/01430, 2016/22/E/ST7/00102, 2014/14/M/ST5/00715 and the National Centre for Science and Development Grant Techmatstrateg No. 347324. This work was partially supported by the US DOE (DE‐SC0014607) and by the Science for Peace Programme of NATO (Grant no. G5147). The DS funds of the Faculty of Electronics, Telecommunications, and Informatics of the Gdańsk University of Technology are also acknowledged. The authors declare no conflict of interest.
Funding AgencyGrant Number
National Science Centre (Poland)2015/16/T/ST7/00469
National Science Centre (Poland)2016/21/B/ST7/01430
National Science Centre (Poland)2016/22/E/ST7/00102
National Science Centre (Poland)2014/14/M/ST5/00715
National Centre for Science and Development (Poland)347324
Department of Energy (DOE)DE-SC0014607
North Atlantic Treaty Organization (NATO)G5147
Gdańsk University of TechnologyUNSPECIFIED
Subject Keywords:carrier transfer, chemical vapor deposition, freestanding diamond nanosheets, graphene, heterojunction
Other Numbering System:
Other Numbering System NameOther Numbering System ID
Issue or Number:3
Record Number:CaltechAUTHORS:20190313-160738787
Persistent URL:
Official Citation:R. Bogdanowicz, M. Ficek, M. Sobaszek, A. Nosek, Ł. Gołuński, J. Karczewski, A. Jaramillo‐Botero, W. A. Goddard III, M. Bockrath, T. Ossowski, Adv. Funct. Mater. 2019, 29, 1805242.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93791
Deposited By: George Porter
Deposited On:14 Mar 2019 14:25
Last Modified:16 Nov 2021 17:00

Repository Staff Only: item control page