CaltechAUTHORS
  A Caltech Library Service

A 512-Pixel 3kHz-Frame-Rate Dual-Shank Lensless Filterless Single-Photon-Avalanche-Diode CMOS Neural Imaging Probe

Lee, Changhyuk and Taal, Adriaan J. and Choi, Jaebin and Kim, Kukjoo and Tien, Kevin and Moreaux, Laurent and Roukes, Michael L. and Shepard, Kenneth L. (2019) A 512-Pixel 3kHz-Frame-Rate Dual-Shank Lensless Filterless Single-Photon-Avalanche-Diode CMOS Neural Imaging Probe. In: 2019 IEEE International Solid- State Circuits Conference - (ISSCC). IEEE , Piscataway, NJ, pp. 198-200. ISBN 978-1-5386-8531-0. http://resolver.caltech.edu/CaltechAUTHORS:20190314-133521536

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20190314-133521536

Abstract

Optical functional neural imaging has revolutionized neuroscience with optical reporters that enable single-cell-resolved monitoring of neuronal activity in vivo. State-of-the-art microscopy methods, however, are fundamentally limited in imaging depth by absorption and scattering in tissue even with the use of the most sophisticated two-photon microscopy techniques [1]. To overcome this imaging depth problem, we develop a lens-less, optical-filter-less, shank-based image sensor array that can be inserted into the brain, allowing cellular-resolution recording at arbitrary depths with excitation provided by an external laser light source (Fig. 11.5.1). Lens-less imaging is achieved generally by giving each pixel a spatial sensitivity function, which can be introduced by near-field or far-field, phase or amplitude masking. Since probe thickness must be less than 70μm to limit tissue damage and far-field masks are characterized by distances on the order of 200μm between the mask and the detector [2], we employ a near-field amplitude mask formed by Talbot gratings in the back-end metal of the CMOS process, which gives each pixel a diffraction-grating-induced angle-sensitivity [3]. Filter-less fluorescence imaging is achieved with time-gated operation in which the excitation light source is pulsed and pixel-level time-gated circuitry collects photons only after the excitation source has been removed.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/ISSCC.2019.8662408DOIArticle
https://ieeexplore.ieee.org/document/8662408PublisherArticle
ORCID:
AuthorORCID
Roukes, Michael L.0000-0002-2916-6026
Additional Information:© 2019 IEEE. This work was supported by the National Institutes of Health under Grant U01NS090596, by the Defense Advanced Research Projects Agency (DARPA) under Contract N66001-17-C-4012, and by the U. S. Army Research Laboratory and the U. S. Army Research Office under Contract W911NF-12-1-0594. We would also like to thank TSMC Foundry for their full support in testchip fabrication.
Funders:
Funding AgencyGrant Number
NIHU01NS090596
Defense Advanced Research Projects Agency (DARPA)N66001-17-C-4012
Army Research LaboratoryUNSPECIFIED
Army Research Office (ARO)W911NF-12-1-0594
Record Number:CaltechAUTHORS:20190314-133521536
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20190314-133521536
Official Citation:C. Lee et al., "11.5 A 512-Pixel 3kHz-Frame-Rate Dual-Shank Lensless Filterless Single-Photon-Avalanche-Diode CMOS Neural Imaging Probe," 2019 IEEE International Solid- State Circuits Conference - (ISSCC), San Francisco, CA, USA, 2019, pp. 198-200. doi: 10.1109/ISSCC.2019.8662408
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93826
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:14 Mar 2019 20:44
Last Modified:14 Mar 2019 20:44

Repository Staff Only: item control page