A Caltech Library Service

Fabrication of Low Threshold Voltage Microlasers

Scherer, A. and Jewell, J. L. and Walther, M. and Harbison, J. P. and Florez, L. T. (1992) Fabrication of Low Threshold Voltage Microlasers. In: 50th Annual Device Research Conference. IEEE , Piscataway, NJ, pp. 77-78.

[img] PDF - Published Version
See Usage Policy.


Use this Persistent URL to link to this item:


We have reduced the voltage required for threshold in vertical cavity surface emitting lasers (VCSELs) to 1.7 V. Molecular beam epitaxy (MBE) was used to grow 30 pairs of n-doped Al_(0.15)GaAs/AlAs bottom mirrors and the active p-n junction with a 1 μm p-doped top contact. 12 pairs of alternating SiO_2/Si_3N_4 layers formed a high-reflectivity mirror which was used to complete the laser cavity. We have evaluated these reactive sputter-deposited mirrors by using finesse measurements in resonator structures, and obtain reflectivities of above 98% in 9.5 pairs. Individual laser elements were defined by ion etching through the p-n junction, followed by planarization with SiO_2 to define the current path. Then, Au-Zn p-contacts were deposited and alloyed for lateral current injection. Finally, another ion milling step was used to isolate individual contacts. Lasers with widths ranging from 7.5 μm to 25 μm were fabricated and measured.

Item Type:Book Section
Related URLs:
URLURL TypeDescription
Additional Information:© 1992 IEEE.
Record Number:CaltechAUTHORS:20190315-110218810
Persistent URL:
Official Citation:A. Scherer, J. L. Jewell, M. Walther, J. P. Harbison and L. T. Florez, "Fabrication of Low Threshold Voltage Microlasers," 50th Annual Device Research Conference, Cambridge, MA, USA, 1992, pp. 0_77-0_78. doi: 10.1109/DRC.1992.671875
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93867
Deposited By: Tony Diaz
Deposited On:15 Mar 2019 18:10
Last Modified:16 Nov 2021 17:01

Repository Staff Only: item control page