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Ion Beam Machining Of Optoelectronic Components

Scherer, A. and Soole, J. and Lee, H. and Beebe, E. and Orenstein, M. and Bhatt, R. (1991) Ion Beam Machining Of Optoelectronic Components. In: LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics. IEEE , pp. 8-9. ISBN 0-87942-618-7. https://resolver.caltech.edu/CaltechAUTHORS:20190319-083914060

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Abstract

We produce very smooth vertical sidewalls with high anisotropy in III-V semiconductors by ion beam etching. These qualities are used to fabricate mirrors and deflect light in InGaAs and GaAs waveguide structures. Either a maskless technique, using a focussed ion beam (FIB), or a lithographically deposited mask followed by broad-beam etching (CAIBE) are employed to produce such facets. Here, we describe the two examples of application of high-resolution ion beam etching techniques towards miniaturizing optoelectronic devices. We show the conversion of an edge-emitting laser structure into a surface-emitting structure, by cutting 45° reflection mirrors, and the fabrication of a monolithic InP-based wavelength demultiplexer by etching a diffraction grating.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/leosst.1991.638986DOIArticle
Additional Information:© 1991 IEEE.
Record Number:CaltechAUTHORS:20190319-083914060
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190319-083914060
Official Citation:A. Scherer, J. Soole, H. Lee, E. Beebe, M. Orenstein and R. Bhat, "Ion Beam Machining Of Optoelectronic Components," LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics, Newport Beach, CA, USA, 1991, pp. 8-9. doi: 10.1109/LEOSST.1991.638986
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93953
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:19 Mar 2019 16:34
Last Modified:03 Oct 2019 20:59

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