Scherer, A. and Soole, J. and Lee, H. and Beebe, E. and Orenstein, M. and Bhatt, R. (1991) Ion Beam Machining Of Optoelectronic Components. In: LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics. IEEE , pp. 8-9. ISBN 0-87942-618-7. https://resolver.caltech.edu/CaltechAUTHORS:20190319-083914060
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Abstract
We produce very smooth vertical sidewalls with high anisotropy in III-V semiconductors by ion beam etching. These qualities are used to fabricate mirrors and deflect light in InGaAs and GaAs waveguide structures. Either a maskless technique, using a focussed ion beam (FIB), or a lithographically deposited mask followed by broad-beam etching (CAIBE) are employed to produce such facets. Here, we describe the two examples of application of high-resolution ion beam etching techniques towards miniaturizing optoelectronic devices. We show the conversion of an edge-emitting laser structure into a surface-emitting structure, by cutting 45° reflection mirrors, and the fabrication of a monolithic InP-based wavelength demultiplexer by etching a diffraction grating.
| Item Type: | Book Section | ||||||
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| Additional Information: | © 1991 IEEE. | ||||||
| Record Number: | CaltechAUTHORS:20190319-083914060 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20190319-083914060 | ||||||
| Official Citation: | A. Scherer, J. Soole, H. Lee, E. Beebe, M. Orenstein and R. Bhat, "Ion Beam Machining Of Optoelectronic Components," LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics, Newport Beach, CA, USA, 1991, pp. 8-9. doi: 10.1109/LEOSST.1991.638986 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 93953 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 19 Mar 2019 16:34 | ||||||
| Last Modified: | 03 Oct 2019 20:59 |
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