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Low-Voltage-Threshold Microlasers

Jewell, J. L. and Scherer, A. and Walther, M. and Harbison, J. P. and Florez, L. T. (1992) Low-Voltage-Threshold Microlasers. In: Conference on Lasers and Electro-Optics : summaries of papers presented at the Conference on Lasers and Electro-Optics : May 10-15, 1992, Anaheim, California. Technical digest series (Optical Society of America). No.12. Optical Society of America , Washington, D.C., Art. No. CPD21. ISBN 9781557522375.

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We have reduced the voltage required for threshold in vertical cavity surface emitting lasers (VCSEL) to 1.7 V [l], the lowest yet reported for a CW-operating VCSEL [2,3]. Room-temperature current threshold was 3 mA pulsed, 4 mA CW. This advance in VCSEL technology leads to manageable heat dissipation for high packing densities. It was achieved in a structure which can be further optimized for high wallplug efficiency and high powers. Furthermore the thickness of the molecular beam epitaxially (MBE) grown portion of the structure was reduced by about 1.5 μm compared to conventional VCSELs, resulting in decreased MBE costs, significantly shallower processing depths and easier integration of VCSELs with transistors or other electronics. The (resistance x area) products of our VCSELs are nearly as low as those reported for high-power edge-emitting lasers. MBE was used to grown-doped Al_(0.15)Ga_(0.85)As/GaAs bottom mirror layers, the active region containing 3 GaAs quantum wells, and a 1-μm-thick p-doped top contact layer. 12 pairs of alternating SiO_2/Si_3N_4 layers formed a high-reflectivity mirror which completed the laser cavity. The reactive sputter-deposited mirrors produce reflectivities of 98.3% for 9.5 pairs [3]. Individual laser elements were defined by ion milling of mesas through the p-n junction, followed by planarization with SiO_2 to define the current path. Then, Au-Zn p-contacts were deposited around the mesa tops and alloyed for current injection. A final ion-milling step was used to isolate individual contacts. In this way microlasers with diameters ranging from 7.5-25 μm were fabricated and measured.

Item Type:Book Section
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Scherer, A.0000-0002-2160-9064
Additional Information:© 1992 Optical Society of America.
Series Name:Technical digest series (Optical Society of America)
Issue or Number:12
Record Number:CaltechAUTHORS:20190319-102721087
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Official Citation:J. L. Jewell, A. Scherer, M. Walther, J. P. Harbison, and L. T. Florez, "Low-Voltage-Threshold Microlasers," in Conference on Lasers and Electro-Optics, A. Johnson, R. Lind, T. Baer, and A. Smirl, eds., Vol. 12 of OSA Technical Digest (Optical Society of America, 1992), paper CPD21.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:93961
Deposited By: Tony Diaz
Deposited On:19 Mar 2019 18:18
Last Modified:09 Mar 2023 23:02

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