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A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics

Went, Cora M. and Wong, Joeson and Jahelka, Phillip R. and Kelzenberg, Michael and Biswas, Souvik and Hunt, Matthew S. and Carbone, Abigail and Atwater, Harry A. (2019) A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics. Science Advances, 5 (12). Art. No. eaax6061. ISSN 2375-2548. PMCID PMC6924982. https://resolver.caltech.edu/CaltechAUTHORS:20190513-082509112

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Abstract

Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin optoelectronic devices due to their high absorption coefficients and intrinsically passivated surfaces. To maintain these near-perfect surfaces, recent research has focused on fabricating contacts that limit Fermi-level pinning at the metal-semiconductor interface. Here, we develop a new, simple procedure for transferring metal contacts that does not require aligned lithography. Using this technique, we fabricate vertical Schottky-junction WS₂ solar cells, with Ag and Au as asymmetric work function contacts. Under laser illumination, we observe rectifying behavior and open-circuit voltage above 500 mV in devices with transferred contacts, in contrast to resistive behavior and open-circuit voltage below 15 mV in devices with evaporated contacts. One-sun measurements and device simulation results indicate that this metal transfer process could enable high specific power vertical Schottky-junction transition metal dichalcogenide photovoltaics, and we anticipate that this technique will lead to advances for two-dimensional devices more broadly.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1126/sciadv.aax6061DOIArticle
https://advances.sciencemag.org/content/suppl/2019/12/16/5.12.eaax6061.DC1PublisherSupplementary Materials
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6924982PubMed CentralArticle
https://arxiv.org/abs/1903.08191arXivDiscussion Paper
ORCID:
AuthorORCID
Wong, Joeson0000-0002-6304-7602
Jahelka, Phillip R.0000-0002-1460-7933
Kelzenberg, Michael0000-0002-6249-2827
Atwater, Harry A.0000-0001-9435-0201
Alternate Title:Transferred metal contacts for vertical Schottky-junction transition metal dichalcogenide photovoltaics
Additional Information:© 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. Submitted 8 April 2019; Accepted 30 October 2019; Published 20 December 2019. We thank S. Nam for the useful discussions. This work was supported by the DOE “Photonics at Thermodynamic Limits” Energy Frontier Research Center under grant DE-SC0019140. C.M.W. and J.W. acknowledge support from the NSF Graduate Research Fellowship under grants 1745301 and 1144469. C.M.W. acknowledges fellowship support from the Resnick Sustainability Institute. Author contributions: C.M.W. fabricated the devices, performed the measurements, and performed the simulations. C.M.W., J.W., P.R.J., and S.B. developed the metal transfer technique. J.W. and P.R.J. assisted with the simulations. M.K. assisted with the solar simulator, absorption, and EQE measurements. M.S.H. and A.C. assisted with the TEM sample preparation and imaging. H.A.A. supervised all the experiments, calculations, and data collection. All authors contributed to the data interpretation, presentation, and writing of the manuscript. The authors declare that they have no competing interests. Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.
Group:JCAP, Resnick Sustainability Institute
Funders:
Funding AgencyGrant Number
Department of Energy (DOE)DE-SC0019140
NSF Graduate Research FellowshipDGE-1745301
NSF Graduate Research FellowshipDGE-1144469
Resnick Sustainability InstituteUNSPECIFIED
Issue or Number:12
PubMed Central ID:PMC6924982
Record Number:CaltechAUTHORS:20190513-082509112
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190513-082509112
Official Citation:C. M. Went, J. Wong, P. R. Jahelka, M. Kelzenberg, S. Biswas, M. S. Hunt, A. Carbone, H. A. Atwater, A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics. Sci. Adv. 5, eaax6061 (2019); doi: 10.1126/sciadv.aax6061
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:95420
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:13 May 2019 16:27
Last Modified:09 Mar 2020 13:18

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