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Photodetection in silicon beyond the band edge with surface states

Baehr-Jones, T. and Hochberg, M. and Scherer, A. (2008) Photodetection in silicon beyond the band edge with surface states. Optics Express, 16 (3). pp. 1659-1668. ISSN 1094-4087.

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Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are the two main technological hurdles before silicon can become a comprehensive platform for integrated optics. We report on the generation of free carriers in unimplanted SOI ridge waveguides, which we attribute to surface state absorption. By electrically contacting the waveguides, a photodetector with a responsivity of 36 mA/W and quantum efficiency of 2.8% is demonstrated. The photoconductive effect is shown to have minimal falloff at speeds of up to 60 Mhz.

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Additional Information:© 2008 Optical Society of America. Received 19 September 2007; revised 14 January 2008; accepted 15 January 2008; published 24 January 2008. This work was supported in part by the AFOSR(FA9550-04-1-0434) and DARPA(HR0011-04-1-0054), and the CNF, which is funded as part of the National Nanotechnology Infrastructure Network by the NSF. Prof. Scott Dunham at the University of Washington is gratefully acknowledged for many helpful discussions.
Subject Keywords:photodetectors; integrated optics; ridge waveguides
Issue or Number:3
Record Number:CaltechAUTHORS:BAEoe08
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Official Citation:T. Baehr-Jones, M. Hochberg, and A. Scherer, "Photodetection in silicon beyond the band edge with surface states," Opt. Express 16, 1659-1668 (2008)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9595
Deposited By: Archive Administrator
Deposited On:12 Feb 2008
Last Modified:03 Oct 2019 00:01

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