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Short cavity InGaAsP/InP lasers with dielectric mirrors

Koren, U. and Rav-Noy, Z. and Hasson, A. and Chen, T. R. and Yu, K. L. and Chiu, L. C. and Margalit, S. and Yariv, A. (1983) Short cavity InGaAsP/InP lasers with dielectric mirrors. Applied Physics Letters, 42 (10). pp. 848-850. ISSN 0003-6951. doi:10.1063/1.93787.

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Short cavity length (38 µm) lasers have been fabricated using a recently developed microcleavage technique. SiO2-amorphous Si multilayer coatings have been evaported on the lasers to obtain high reflectivity mirrors. The lasers have current thresholds as low as 3.8 mA with 85% reflecting front mirror and high reflectivity rear mirror and 2.9 mA with two high reflectivity mirrors. Single longitudinal mode operation is observed over a wide range of driving currents and temperatures.

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Additional Information:© 1983 American Institute of Physics. Received 13 December 1982; accepted 1 February 1983. This work was supported by the Office of Naval Research and the Air Force Office of Scientific Research.
Issue or Number:10
Record Number:CaltechAUTHORS:KORapl83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9606
Deposited By: Tony Diaz
Deposited On:13 Feb 2008
Last Modified:08 Nov 2021 21:00

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