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Parasitic-free modulation of semiconductor lasers

Vahala, Kerry J. and Newkirk, Michael A. (1989) Parasitic-free modulation of semiconductor lasers. IEEE Journal of Quantum Electronics, 25 (6). pp. 1393-1398. ISSN 0018-9197. doi:10.1109/3.29274.

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Active-layer photomixing is a technique for modulating semiconductor lasers with nearly perfect immunity to device parasitics. Measurements of the intrinsic modulation response of a laser diode using this technique at temperatures as low as 4.2 K are discussed. From these measurements, the temperature dependence of important dynamical parameters is determined. In addition, this provides a stringent test of the active-layer photomixing technique since parasitic response is degraded, while the intrinsic response is improved for low-temperature operation. At 4.2 K, the ideal intrinsic response is measured for frequencies as high as 15 GHz despite an estimated parasitic corner frequency of 410 MHz.

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Vahala, Kerry J.0000-0003-1783-1380
Additional Information:© Copyright 1989 IEEE. Reprinted with permission. Manuscript received October 4, 1988; revised January 12, 1989. This work was supported in part by the National Science Foundation, in part by the Powell Foundation, in part by the ATT Corporation, and in part by the IBM Corporation.
Subject Keywords:III-V semiconductors; aluminum compounds; gallium arsenide; optical modulation; semiconductor junction lasers
Issue or Number:6
Record Number:CaltechAUTHORS:VAHieeejqe89
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9626
Deposited By: Archive Administrator
Deposited On:19 Feb 2008
Last Modified:08 Nov 2021 21:00

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