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Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide

Moyer, R. H. and Agmon, P. and Koch, T. L. and Yariv, A. (1981) Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide. Applied Physics Letters, 39 (3). pp. 266-268. ISSN 0003-6951. doi:10.1063/1.92667.

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The speed of opto-electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto-electronic switch.

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Additional Information:©1981 American Institute of Physics. Received 13 November 1980; accepted for publication 18 May 1981. This work was supported by a National Science Foundation Grant and a National Science Foundation Graduate Fellowship (T.L.K.).
Issue or Number:3
Record Number:CaltechAUTHORS:MOYapl81
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9637
Deposited By: Tony Diaz
Deposited On:20 Feb 2008
Last Modified:08 Nov 2021 21:00

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