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Antisymmetric linear magnetoresistance and the planar Hall effect

Wang, Yishu and Lee, Patrick A. and Silevitch, D. M. and Gómez, F. and Cooper, S. E. and Ren, Y. and Yan, J.-Q. and Mandrus, D. and Rosenbaum, T. F. and Feng, Yejun (2020) Antisymmetric linear magnetoresistance and the planar Hall effect. Nature Communications, 11 . Art. No. 216. ISSN 2041-1723. PMCID PMC6954222. https://resolver.caltech.edu/CaltechAUTHORS:20190624-074905872

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Abstract

The phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager’s theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρ_(xy)(H_z) channel, and should be understood as a part of the general galvanomagnetic behavior.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1038/s41467-019-14057-6DOIArticle
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6954222PubMed CentralArticle
https://arxiv.org/abs/1904.00330arXivDiscussion Paper
ORCID:
AuthorORCID
Wang, Yishu0000-0002-5171-8376
Silevitch, D. M.0000-0002-6347-3513
Yan, J.-Q.0000-0001-6625-4706
Mandrus, D.0000-0003-3616-7104
Feng, Yejun0000-0003-3667-056X
Alternate Title:Odd-parity linear magnetoresistance and the planar Hall effect
Additional Information:© 2020 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. Received 19 June 2019; Accepted 10 December 2019 Published; 10 January 2020. We are grateful for discussions with H. Chen. Y.F. acknowledges support from the Okinawa Institute of Science and Technology Graduate University (OIST), with subsidy funding from the Cabinet Office, Government of Japan. We also acknowledge the Mechanical Engineering and Microfabrication Support Section of OIST for the usage of shared equipment. The work at Caltech was supported by National Science Foundation Grant No. DMR-1606858. P.A.L. acknowledges support from the US Department of Energy, Basic Energy Sciences, Grant No. DE-FG02-03ER46076. J.-Q.Y. and D.M. acknowledge support from the US Department of Energy, Office of Science, Basic Energy Sciences, Division of Materials Sciences and Engineering. The work at the Advanced Photon Source of Argonne National Laboratory was supported by the US Department of Energy Basic Energy Sciences under Contract No. NEAC02-06CH11357. Data availability: The data that support the findings of this study are available from the corresponding authors upon request. Author Contributions: Y.W., Y.F. and T.F.R. conceived of the research; J.-Q.Y. and D.M. provided osmate samples; Y.W., Y.F., D.M.S., F.G., S.E.C. and Y.R. performed experiments; P.A.L., Y.F. and Y.W. developed the theoretical interpretation; Y.W., Y.F., P.A.L. and T.F.R. prepared the manuscript. The authors declare no competing interests.
Funders:
Funding AgencyGrant Number
Okinawa Institute of Science and TechnologyUNSPECIFIED
Government of JapanUNSPECIFIED
NSFDMR-1606858
Department of Energy (DOE)DE-FG02-03ER46076
Department of Energy (DOE)NEAC02-06CH11357
PubMed Central ID:PMC6954222
Record Number:CaltechAUTHORS:20190624-074905872
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190624-074905872
Official Citation:Wang, Y., Lee, P.A., Silevitch, D.M. et al. Antisymmetric linear magnetoresistance and the planar Hall effect. Nat Commun 11, 216 (2020) doi:10.1038/s41467-019-14057-6
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:96648
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:24 Jun 2019 17:12
Last Modified:18 Nov 2020 23:02

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