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A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor

Chen, T. R. and Utaka, Katsuyuki and Zhuang, Yuhua and Liu, Ya-Yun and Yariv, Amnon (1987) A vertical monolithic combination of an InGaAsP/InP laser and a heterojunction bipolar transistor. IEEE Journal of Quantum Electronics, 23 (6). pp. 919-924. ISSN 0018-9197.

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A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together with an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

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Additional Information:© 1987 IEEE. Reprinted with permission. Manuscript received October 15, 1986; revised February IS, 1987. This work was supported by the U.S. Office of Naval Research (L. Cooper), the National Science Foundation (K. Gustafson), and the U.S. Army Research Office (R. Guenther). The author gratefully acknowledge Dr. B. Chang, D. Armstrong, W. Marshall, J. Mercado, and R. Wong for their assistance.
Subject Keywords:Bipolar transistors; Gallium materials/lasers; Integrated optoelectronics
Issue or Number:6
Record Number:CaltechAUTHORS:CHEieeejqe87
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9670
Deposited By: Archive Administrator
Deposited On:27 Feb 2008
Last Modified:03 Oct 2019 00:02

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