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Dissipation in Single-Crystal 3C-SiC Ultra-High Frequency Nanomechanical Resonators

Feng, X. L. and Zorman, C. A. and Mehregany, M. and Roukes, M. L. (2006) Dissipation in Single-Crystal 3C-SiC Ultra-High Frequency Nanomechanical Resonators. . (Unpublished)

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The energy dissipation Q^(-1) (where Q is the quality factor) and resonance frequency characteristics of single-crystal 3C-SiC ultrahigh frequency (UHF) nanomechanical resonators are measured, for a family of UHF resonators with resonance frequencies of 295MHz, 395MHz, 411MHz, 420MHz, 428MHz, and 482MHz. A temperature dependence of dissipation, Q^(-1) ~ T^(0.3) has been identified in these 3C-SiC devices. Possible mechanisms that contribute to dissipation in typical doubly-clamped beam UHF resonators are analyzed. Device size and dimensional effects on the dissipation are also examined. Clamping losses are found to be particularly important in these UHF resonators. The resonance frequency decreases as the temperature is increased, and the average frequency temperature coefficient is about -45ppm/K.

Item Type:Report or Paper (Discussion Paper)
Related URLs:
URLURL TypeDescription Paper
Roukes, M. L.0000-0002-2916-6026
Additional Information:This work is supported by the DARPA MTO under grant DABT63- 98-1-0012, DARPA/SPAWAR under grant N66001-02-1-8914, and the NSF under grant ECS-0089061.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)DABT63-98-1-0012
Office of Naval Research (ONR)N66001-02-1-8914
Record Number:CaltechAUTHORS:20190702-102653543
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:96880
Deposited By: Tony Diaz
Deposited On:08 Jul 2019 17:32
Last Modified:03 Oct 2019 21:26

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