Söderström, J. R. and Chow, D. H. and McGill, T. C. (1989) New negative differential resistance device based on resonant interband tunneling. Applied Physics Letters, 55 (11). pp. 1094-1096. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:SODapl89a
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Abstract
We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure.
| Item Type: | Article |
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| Additional Information: | © 1989 American Institute of Physics. Received 30 May 1989; accepted 6 July 1989. This work was supported by the Office of Naval Research under contract No. NO00014-89-J-1141. One of us (JRS) wishes to thank the Boncompagni-Ludovisi foundation for financial support. Another (DHC) is thankful to TRW for financial support. |
| Record Number: | CaltechAUTHORS:SODapl89a |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:SODapl89a |
| Alternative URL: | http://dx.doi.org/10.1063/1.101715 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 9701 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Tony Diaz |
| Deposited On: | 05 Mar 2008 |
| Last Modified: | 26 Dec 2012 09:51 |
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