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Plasma-etched pattern transfer of sub-10 nm structures using a metal–organic resist and helium ion beam lithography

Lewis, Scott M. and Hunt, Matthew S. and DeRose, Guy A. and Alty, Hayden R. and Li, Jarvis and Wertheim, Alex and De Rose, Lucia and Timco, Grigore A. and Scherer, Axel and Yeates, Stephen G. and Winpenny, Richard E. P. (2019) Plasma-etched pattern transfer of sub-10 nm structures using a metal–organic resist and helium ion beam lithography. Nano Letters, 19 (9). pp. 6043-6048. ISSN 1530-6984. https://resolver.caltech.edu/CaltechAUTHORS:20190819-134203388

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Abstract

Field-emission devices are promising candidates to replace silicon fin field-effect transistors as next-generation nanoelectronic components. For these devices to be adopted, nanoscale field emitters with nanoscale gaps between them need to be fabricated, requiring the transfer of, for example, sub-10 nm patterns with a sub-20 nm pitch to substrates like silicon and tungsten. New resist materials must therefore be developed that exhibit the properties of sub-10 nm resolution and high dry etch resistance. A negative tone, metal–organic resist is presented here. It can be patterned to produce sub-10 nm features when exposed to helium ion beam lithography at line doses on the order of tens of picocoulombs per centimeter. The resist was used to create 5 nm wide, continuous, discrete lines spaced on a 16 nm pitch in silicon and 6 nm wide lines on an 18 nm pitch in tungsten, with line edge roughness of 3 nm. After the lithographic exposure, the resist demonstrates high resistance to silicon and tungsten dry etch conditions (SF_6 and C_4F_8 plasma), allowing the pattern to be transferred to the underlying substrates. The resist’s etch selectivity for silicon and tungsten was measured to be 6.2:1 and 5.6:1, respectively; this allowed 3 to 4 nm thick resist films to yield structures that were 21 and 19 nm tall, respectively, while both maintained a sub-10 nm width on a sub-20 nm pitch.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1021/acs.nanolett.9b01911DOIArticle
ORCID:
AuthorORCID
Lewis, Scott M.0000-0002-4183-1906
Winpenny, Richard E. P.0000-0002-7101-3963
Additional Information:© 2019 American Chemical Society. Received: May 9, 2019; Revised: July 20, 2019; Published: August 19, 2019. We acknowledge the EPSRC (U.K.) for funding (grant EP/R023158/1). The University of Manchester also supported this work. We gratefully acknowledge the critical support and infrastructure provided for this work by the Kavli Nanoscience Institute at Caltech. The authors declare no competing financial interest.
Group:Kavli Nanoscience Institute
Funders:
Funding AgencyGrant Number
Engineering and Physical Sciences Research Council (EPSRC)EP/R023158/1
University of ManchesterUNSPECIFIED
Kavli Nanoscience InstituteUNSPECIFIED
Subject Keywords:metal–organic resist, ion beam resist, helium ion beam lithography, high resolution pattern, high dry etch resistance
Issue or Number:9
Record Number:CaltechAUTHORS:20190819-134203388
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190819-134203388
Official Citation:Plasma-Etched Pattern Transfer of Sub-10 nm Structures Using a Metal–Organic Resist and Helium Ion Beam Lithography. Scott M. Lewis, Matthew S. Hunt, Guy A. DeRose, Hayden R. Alty, Jarvis Li, Alex Wertheim, Lucia De Rose, Grigore A. Timco, Axel Scherer, Stephen G. Yeates, and Richard E. P. Winpenny. Nano Letters 2019 19 (9), 6043-6048. DOI: 10.1021/acs.nanolett.9b01911
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:98003
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:19 Aug 2019 20:47
Last Modified:09 Oct 2019 14:19

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