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Longitudinal mode spectrum of GaAs injection lasers under high-frequency microwave modulation

Lau, K. Y. and Harder, Ch. and Yariv, A. (1983) Longitudinal mode spectrum of GaAs injection lasers under high-frequency microwave modulation. Applied Physics Letters, 43 (7). pp. 619-621. ISSN 0003-6951. doi:10.1063/1.94463.

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Experimental observations of the lasing spectrum of a single mode semiconductor laser under continuous microwave modulation reveal that the lasing spectrum is apparently locked to a single longitudinal mode for optical modulation depths up to ~80%, beyond which the lasing spectrum becomes multimoded, whose envelope width increases very rapidly with further increase in modulation depth. These results are satisfactorily explained by a theoretical treatment which enables one to predict the dynamic lasing spectrum of a laser from its cw lasing spectra at various output powers.

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Additional Information:© 1983 American Institute of Physics. Received 5 May 1983; accepted 20 June 1983. This research was supported by the Defense Advance Research Project Agency, the National Science Foundation under the Optical Communication Program, and by the Army Research Office.
Issue or Number:7
Record Number:CaltechAUTHORS:LAUapl83c
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9806
Deposited By: Tony Diaz
Deposited On:18 Mar 2008
Last Modified:08 Nov 2021 21:02

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