Lau, K. Y. and Harder, Ch. and Yariv, A. (1984) Direct modulation of semiconductor lasers at f>10 GHz by low-temperature operation. Applied Physics Letters, 44 (3). pp. 273-275. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:LAUapl84a
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Abstract
Using a 175-µm-long buried-heterostructure laser fabricated on a semi-insulating substrate operating at −50 °C, a direct amplitude modulation bandwidth in excess of 10 GHz has been achieved.
| Item Type: | Article |
|---|---|
| Additional Information: | © 1984 American Institute of Physics. Received 19 September 1983; accepted 8 November 1983. The authors thank Dr. N. Bar-Chaim and Dr. I. Ury for fabricating the lasers used in this experiment. This research was supported by the Defense Advance Research Project Agency and by the Office of Naval Research. |
| Issue or Number: | 3 |
| Record Number: | CaltechAUTHORS:LAUapl84a |
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:LAUapl84a |
| Alternative URL: | http://dx.doi.org/10.1063/1.94744 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 9807 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Tony Diaz |
| Deposited On: | 18 Mar 2008 |
| Last Modified: | 03 Oct 2019 00:03 |
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