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Polymer blend lithography: a versatile approach for the fabrication of disordered light harvesting nanostructures (Conference Presentation)

Donie, Yidenekachew J. and Osypka, Anna and Siddique, Radwanul H. and Merdzhanova, Tsvetelina and Voggu, Vikas R. and Korgel, Brian A. and Preinfalk, Jan B. and Egel, Amos and Hölscher, Hendrik and Lemmer, Uli and Gomard, Guillaume (2018) Polymer blend lithography: a versatile approach for the fabrication of disordered light harvesting nanostructures (Conference Presentation). In: Photonics for Solar Energy Systems VII. Proceedings of SPIE. No.10688. Society of Photo-Optical Instrumentation Engineers (SPIE) , Bellingham, WA, Art. No. 106880U. ISBN 9781510619029. https://resolver.caltech.edu/CaltechAUTHORS:20190827-111156297

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Abstract

Over the last couple of years, photonic materials with tailored -i.e. with deliberately introduced- structural disorder have attracted considerable interest in photovoltaics due to their extended spectral and angular range of effectiveness [1]. Notably, quasi-random nanostructures realized by e-beam lithography (EBL) have been integrated in solar cells as broadband light trapping elements, and have proved to approach the theoretical (Lambertian) limit [2]. Despite recent research efforts aiming at increasing the EBL writing speed [3], alternative routes based on self-assemblies still possess major advantages for an industrial implementation of disordered structures as they allow to rapidly process them over large areas (>>cm2). In this communication, we show that the up-scalable polymer blend lithography technique can be used as a versa-tile platform for fabricating 2D planar, disordered nanostructures that can be exploited in both top-down and bottom-up strategies. Tailored disorder is achieved here by adjusting the process parameters (polymer blend composition and deposition conditions), enabling to tune the morphology and the spatial distribution of the nanostructures produced, and in turn their light harvesting properties. We first use our approach to pattern a resist etching mask, which is employed for transferring disordered nanoholes into a thin hydrogenated amorphous silicon layer by dry etching (top-down route). We report an enhancement of its integrated absorption of +90% under normal incidence, and of up to +200% at large incident angles with respect to an unprocessed absorber [4]. In a second example, we demonstrate that similar structures can serve as a template in a bottom-up configuration, whereby copper indium diselenide nanocrystals are infiltrated into the disordered nano-holes formed in a resist layer. This route, paving the way to wet-processable "photonized" absorbers, is compared to a previous work relying on a serial writing process [5], and the optical properties of the resulting patterned absorbing layers are analysed. We finally elaborate on the significance of these findings for the reverse problem, namely for light extraction in broadband light-emitting diodes.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
https://doi.org/10.1117/12.2312079DOIVideo
ORCID:
AuthorORCID
Siddique, Radwanul H.0000-0001-7494-5857
Additional Information:© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE).
Series Name:Proceedings of SPIE
Issue or Number:10688
Record Number:CaltechAUTHORS:20190827-111156297
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190827-111156297
Official Citation:Yidenekachew J. Donie, Anna Osypka, Radwanul H. Siddique, Tsvetelina Merdzhanova, Vikas R. Voggu , Brian A. Korgel, Jan B. Preinfalk, Amos Egel, Hendrik Hölscher, Uli Lemmer, and Guillaume Gomard "Polymer blend lithography: a versatile approach for the fabrication of disordered light harvesting nanostructures (Conference Presentation)", Proc. SPIE 10688, Photonics for Solar Energy Systems VII, 106880U (23 May 2018); https://doi.org/10.1117/12.2312079
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:98270
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:27 Aug 2019 18:33
Last Modified:03 Oct 2019 21:39

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