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Intermodulation distortion in a directly modulated semiconductor injection laser

Lau, K. Y. and Yariv, A. (1984) Intermodulation distortion in a directly modulated semiconductor injection laser. Applied Physics Letters, 45 (10). pp. 1034-1036. ISSN 0003-6951. doi:10.1063/1.95053.

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A most important quantity in high-frequency analog transmission is the intermodulation distortion product. Experimental studies of the third order intermodulation distortion products in the modulation response of high-speed semiconductor lasers give very low values (< −60 dB) at low frequencies, an increase at a rate of 40 dB/dec as the modulation frequency is increased, and a leveling off at one-half of the relaxation oscillation resonance frequency. These experimental results can be well explained by a theory based on a perturbative analysis of laser dynamics.

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Additional Information:© 1984 American Institute of Physics. Received 25 April 1984; accepted 6 August 1984. This research was supported by the Defense Advanced Research Project Agency and Naval Research Laboratory.
Issue or Number:10
Record Number:CaltechAUTHORS:LAUapl84e
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9847
Deposited By: Tony Diaz
Deposited On:24 Mar 2008
Last Modified:08 Nov 2021 21:02

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