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Interfacial States and Fano-Feshbach Resonance in Graphene-Silicon Vertical Junction

Tsai, Shin-Hung and Lei, Sidong and Zhu, Xiaodan and Tsai, Shiao-Po and Yin, Gen and Che, Xiaoyu and Deng, Peng and Ng, Jimmy and Zhang, Xiang and Lin, Wei-Hsiang and Jin, Zehua and Qasem, Hussam and Zhou, Zhongpo and Vajtai, Robert and Yeh, Nai-Chang and Ajayan, Pulickel and Xie, Ya-Hong and Wang, Kang L. (2019) Interfacial States and Fano-Feshbach Resonance in Graphene-Silicon Vertical Junction. Nano Letters, 19 (10). pp. 6765-6771. ISSN 1530-6984. https://resolver.caltech.edu/CaltechAUTHORS:20190924-092631211

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Abstract

Interfacial quantum states are drawing tremendous attention recently because of their importance in design of low-dimensional quantum heterostructures with desired charge, spin, or topological properties. Although most studies of the interfacial exchange interactions were mainly performed across the interface vertically, the lateral transport nowadays is still a major experimental method to probe these interactions indirectly. In this Letter, we fabricated a graphene and hydrogen passivated silicon interface to study the interfacial exchange processes. For the first time we found and confirmed a novel interfacial quantum state, which is specific to the 2D–3D interface. The vertically propagating electrons from silicon to graphene result in electron oscillation states at the 2D–3D interface. A harmonic oscillator model is used to explain this interfacial state. In addition, the interaction between this interfacial state (discrete energy spectrum) and the lateral band structure of graphene (continuous energy spectrum) results in Fano–Feshbach resonance. Our results show that the conventional description of the interfacial interaction in low-dimensional systems is valid only in considering the lateral band structure and its density-of-states and is incomplete for the ease of vertical transport. Our experimental observation and theoretical explanation provide more insightful understanding of various interfacial effects in low-dimensional materials, such as proximity effect, quantum tunneling, etc. More important, the Fano–Feshbach resonance may be used to realize all solid-state and scalable quantum interferometers.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1021/acs.nanolett.9b01658DOIArticle
ORCID:
AuthorORCID
Lei, Sidong0000-0001-9129-2202
Che, Xiaoyu0000-0001-6024-040X
Zhang, Xiang0000-0003-4004-5185
Lin, Wei-Hsiang0000-0003-0037-1277
Jin, Zehua0000-0003-1985-0446
Vajtai, Robert0000-0002-3942-8827
Yeh, Nai-Chang0000-0002-1826-419X
Ajayan, Pulickel0000-0001-8323-7860
Xie, Ya-Hong0000-0003-0971-4280
Additional Information:© 2019 American Chemical Society. Received: April 22, 2019; Revised: August 28, 2019; Published: September 23, 2019. We would like to acknowledge the support of National Science Foundation (EFMA-1433541). We would also like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Centre of Excellence for Green Nanotechnologies (CEGN). This work was supported in part by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA. Author Contributions: These authors (S.-H.T. and S.L.) contributed equally to this work. The authors declare no competing financial interest.
Funders:
Funding AgencyGrant Number
NSFEFMA-1433541
King Abdul-Aziz City for Science and Technology (KACST)UNSPECIFIED
Semiconductor Research CorporationUNSPECIFIED
Microelectronics Advanced Research Corporation (MARCO)UNSPECIFIED
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Subject Keywords:graphene, heterostructure, vertical transport, tunneling spectroscopy, interfacial states, Fano−Feshbach resonance
Issue or Number:10
Record Number:CaltechAUTHORS:20190924-092631211
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20190924-092631211
Official Citation:Interfacial States and Fano–Feshbach Resonance in Graphene–Silicon Vertical Junction. Shin-Hung Tsai, Sidong Lei, Xiaodan Zhu, Shiao-Po Tsai, Gen Yin, Xiaoyu Che, Peng Deng, Jimmy Ng, Xiang Zhang, Wei-Hsiang Lin, Zehua Jin, Hussam Qasem, Zhongpo Zhou, Robert Vajtai, Nai-Chang Yeh, Pulickel Ajayan, Ya-Hong Xie, and Kang L. Wang. Nano Letters 2019 19 (10), 6765-6771 DOI: 10.1021/acs.nanolett.9b01658
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:98825
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:24 Sep 2019 16:50
Last Modified:11 Oct 2019 16:39

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