Chen, T. R. and Kajanto, M. and Zhuang, Yuhua and Yariv, A. (1989) Double active region index-guided semiconductor laser. Applied Physics Letters, 54 (2). pp. 108-110. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CHEapl89
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Abstract
A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.
| Item Type: | Article | ||||||
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| Additional Information: | Copyright © 1989 American Institute of Physics. Received 10 August 1988; accepted 31 October 1988. This work was supported by Defense Advanced Research Projects Agency (J. Murphy) and the Office of Naval Research (L. Cooper). | ||||||
| Subject Keywords: | SEMICONDUCTOR LASERS, FABRICATION, EXPERIMENTAL DATA, OPERATION, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, GALLIUM ARSENIDES, INDIUM ARSENIDES, LAYERS, MATHEMATICAL MODELS, BURIED HETEROSTRUCTURES, BURIED LAYERS | ||||||
| Issue or Number: | 2 | ||||||
| Record Number: | CaltechAUTHORS:CHEapl89 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:CHEapl89 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 9895 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 26 Mar 2008 | ||||||
| Last Modified: | 03 Oct 2019 00:04 |
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