Chen, T. R. and Koren, U. and Yu, K. L. and Lau, K. Y. and Chiu, L. C. and Hasson, A. and Margalit, S. and Yariv, A. (1982) High-power, single-mode operation of an InGaAsP/InP laser with a grooved transverse junction using gain stabilization. Applied Physics Letters, 41 (3). pp. 225-228. ISSN 0003-6951. doi:10.1063/1.93475. https://resolver.caltech.edu/CaltechAUTHORS:CHEapl82a
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Abstract
The high-power performance of a groove InGaAsP/InP transverse junction laser fabricated on a semi-insulating InP substrate has been investigated. Peak power of over 250 mW/facet for pulsed operation and 11 mW/facet cw are achieved with stable fundamental mode operation and narrow beam width. It is suggested that the single-mode operation is caused by a gain stabilizing mechanism related to the transverse junction injection profiles.
| Item Type: | Article | ||||||
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| Additional Information: | Copyright © 1982 American Institute of Physics. Received March 1982; accepted for publication 14 May 1982. This work was supported by the Office of Naval Research and the National Science Foundation. | ||||||
| Subject Keywords: | SEMICONDUCTOR LASERS, STABILIZATION, GAIN, OSCILLATION MODES, INDIUM ARSENIDES, GALLIUM ARSENIDES, INDIUM PHOSPHIDES, GALLIUM PHOSPHIDES, ORIENTATION, JUNCTIONS, EXPERIMENTAL DATA, SURFACES, PULSES, STABILITY, SPATIAL DISTRIBUTION, MATHEMATICAL MODELS | ||||||
| Issue or Number: | 3 | ||||||
| DOI: | 10.1063/1.93475 | ||||||
| Record Number: | CaltechAUTHORS:CHEapl82a | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:CHEapl82a | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 9896 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 26 Mar 2008 | ||||||
| Last Modified: | 08 Nov 2021 21:03 |
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