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Direct measurement of the carrier leakage in an InGaAsP/InP laser

Chen, T. R. and Margalit, S. and Koren, U. and Yu, K. L. and Chiu, L. C. and Hasson, A. and Yariv, A. (1983) Direct measurement of the carrier leakage in an InGaAsP/InP laser. Applied Physics Letters, 42 (12). pp. 1000-1002. ISSN 0003-6951. doi:10.1063/1.93841.

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Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions.

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Additional Information:Copyright © 1983 American Institute of Physics. Received 6 December 1982; accepted 15 February 1983. This work was supported by Office of Naval Research and the National Science Foundation.
Subject Keywords:indium arsenides, gallium arsenides, indium phosphides, gallium phosphides, charge carriers, experimental data, semiconductor lasers, heterojunctions, potentials
Issue or Number:12
Record Number:CaltechAUTHORS:CHEapl83a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9902
Deposited By: Archive Administrator
Deposited On:26 Mar 2008
Last Modified:08 Nov 2021 21:03

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