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Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate

Chen, T. R. and Chiu, L. C. and Yu, K. L. and Koren, U. and Hasson, A. and Margalit, S. and Yariv, A. (1982) Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate. Applied Physics Letters, 41 (12). pp. 1115-1117. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:CHEapl82b

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Abstract

Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ~675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained.


Item Type:Article
Additional Information:Copyright © 1982 American Institute of Physics. Received 10 August 1982; accepted 29 September 1982. This work was supported by the National Science Foundation, the Office of Naval Research, and the Air Force Office of Scientific Research. The authors are thankful to Dr. P.C. Chen for the invaluable discussion regarding the mass transport process.
Subject Keywords:semiconductor lasers, threshold current, gallium arsenides, gallium phosphides, indium arsenides, indium phosphides, substrates, experimental data, fabrication, mass transfer, liquids, epitaxy, crystal growth, high temperature, oscillation modes, images
Record Number:CaltechAUTHORS:CHEapl82b
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:CHEapl82b
Alternative URL:http://dx.doi.org/0.1063/1.93420
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9904
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Mar 2008
Last Modified:26 Dec 2012 09:54

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