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Phase-locked InGaAsP laser array with diffraction coupling

Chen, T. R. and Yu, K. L. and Chang, B. and Hasson, A. and Margalit, S. and Yariv, A. (1983) Phase-locked InGaAsP laser array with diffraction coupling. Applied Physics Letters, 43 (2). pp. 136-137. ISSN 0003-6951. doi:10.1063/1.94282.

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A phase-locked array of InGaAsP lasers has been fabricated for the first time. This 50-µm-wide array utilized diffraction coupling between adjacent lasers to achieve phase locking. Threshold current as low as 200 mA is obtained for arrays with 250-µm cavity length. Smooth single-lobe far-field patterns with beam divergence as narrow as 3° have been achieved.

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Additional Information:Copyright © 1983 American Institute of Physics. Received 7 March 1983; accepted 27 April 1983. This work was supported by the National Science Foundation and the Office of Naval Research.
Subject Keywords:indium arsenides, indium phosphides, gallium arsenides, gallium phosphides, semiconductor lasers, diffraction, coupling, fabrication, size, threshold current, laser cavities, images, beam profiles
Issue or Number:2
Record Number:CaltechAUTHORS:CHEapl83b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9905
Deposited By: Archive Administrator
Deposited On:26 Mar 2008
Last Modified:08 Nov 2021 21:03

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