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Carrier leakage and temperature dependence of InGaAsP lasers

Chen, T. R. and Chang, B. and Chiu, L. C. and Yu, K. L. and Margalit, S. and Yariv, A. (1983) Carrier leakage and temperature dependence of InGaAsP lasers. Applied Physics Letters, 43 (3). pp. 217-218. ISSN 0003-6951. doi:10.1063/1.94305.

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A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.

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Additional Information:Copyright © 1983 American Institute of Physics. Received 3 March 1983; accepted 3 May 1983. This work was supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:semiconductor lasers, indium compounds, gallium compounds, arsenic compounds, phosphorus, stimulated emission, temperature dependence, near infrared radiation, heterojunctions, potentials, electrons, holes, leakage current
Issue or Number:3
Record Number:CaltechAUTHORS:CHEapl83c
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9906
Deposited By: Archive Administrator
Deposited On:26 Mar 2008
Last Modified:08 Nov 2021 21:03

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