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Carrier leakage and temperature dependence of InGaAsP lasers

Chen, T. R. and Chang, B. and Chiu, L. C. and Yu, K. L. and Margalit, S. and Yariv, A. (1983) Carrier leakage and temperature dependence of InGaAsP lasers. Applied Physics Letters, 43 (3). pp. 217-218. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:CHEapl83c

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Abstract

A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.94305DOIUNSPECIFIED
Additional Information:Copyright © 1983 American Institute of Physics. Received 3 March 1983; accepted 3 May 1983. This work was supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:semiconductor lasers, indium compounds, gallium compounds, arsenic compounds, phosphorus, stimulated emission, temperature dependence, near infrared radiation, heterojunctions, potentials, electrons, holes, leakage current
Issue or Number:3
Record Number:CaltechAUTHORS:CHEapl83c
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:CHEapl83c
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9906
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:26 Mar 2008
Last Modified:03 Oct 2019 00:04

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