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Very low threshold InGaAsP mesa laser

Chen, T. R. and Chiu, L. C. and Yu, K. L. and Koren, U. and Hasson, A. and Margalit, S. and Yariv, A. (1983) Very low threshold InGaAsP mesa laser. IEEE Journal of Quantum Electronics, 19 (5). pp. 783-785. ISSN 0018-9197.

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Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have been fabricated on semi-insulating (SI) InP substrates. Fabrication of the lasers involves a single-step liquid phase epitaxial (LPE) growth and a simple etching process. Lasers operating in the fundamental transverse mode with threshold currents as low as 6.3 mA (for a cavity length of 250 μm) have been obtained. Comparison between the unpassivated lasers and those passivated using the mass transport technique is described.

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Additional Information:© Copyright 1983 IEEE. Reprinted with permission. Manuscript received September 7, 1982; revised November 19, 1982. This work was supported by the National Science Foundation, the U.S. Office of Naval Research, and the U.S. Air Force Office of Scientific Research.
Issue or Number:5
Record Number:CaltechAUTHORS:CHEieeejqe83
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9917
Deposited By: Archive Administrator
Deposited On:27 Mar 2008
Last Modified:03 Oct 2019 00:04

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