Richer, I. and Middlebrook, R. D. (1964) Power-law nature of field-effect transistor characteristics - Authors' Comment. Proceedings of the IEEE, 52 (3). pp. 314-315. ISSN 0018-9219. doi:10.1109/PROC.1964.2891. https://resolver.caltech.edu/CaltechAUTHORS:20191015-145724169
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Abstract
It is interesting to see in Richer and Middlebrook’s communication the experimental justification of a power-law relationship between drain current and gate voltage.
| Item Type: | Article | ||||||
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| Additional Information: | © 1964 IEEE. | ||||||
| Issue or Number: | 3 | ||||||
| DOI: | 10.1109/PROC.1964.2891 | ||||||
| Record Number: | CaltechAUTHORS:20191015-145724169 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20191015-145724169 | ||||||
| Official Citation: | J. LeMee, A. V. J. Martin, I. Richer and R. D. Middlebrook, "Power-law nature of field-effect transistor characteristics," in Proceedings of the IEEE, vol. 52, no. 3, pp. 314-315, March 1964. doi: 10.1109/PROC.1964.2891 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 99282 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Tony Diaz | ||||||
| Deposited On: | 15 Oct 2019 22:40 | ||||||
| Last Modified: | 16 Nov 2021 17:45 |
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