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Power-law nature of field-effect transistor characteristics - Authors' Comment

Richer, I. and Middlebrook, R. D. (1964) Power-law nature of field-effect transistor characteristics - Authors' Comment. Proceedings of the IEEE, 52 (3). pp. 314-315. ISSN 0018-9219. https://resolver.caltech.edu/CaltechAUTHORS:20191015-145724169

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Abstract

It is interesting to see in Richer and Middlebrook’s communication the experimental justification of a power-law relationship between drain current and gate voltage.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1109/PROC.1964.2891DOIArticle
Additional Information:© 1964 IEEE.
Issue or Number:3
Record Number:CaltechAUTHORS:20191015-145724169
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20191015-145724169
Official Citation:J. LeMee, A. V. J. Martin, I. Richer and R. D. Middlebrook, "Power-law nature of field-effect transistor characteristics," in Proceedings of the IEEE, vol. 52, no. 3, pp. 314-315, March 1964. doi: 10.1109/PROC.1964.2891
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:99282
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:15 Oct 2019 22:40
Last Modified:15 Oct 2019 22:40

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