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Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser

Chen, T. R. and Eng, L. and Zhao, B. and Zhuang, Y. H. and Sanders, S. and Morkoç, H. and Yariv, A. (1990) Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser. IEEE Journal of Quantum Electronics, 26 (7). pp. 1183-1190. ISSN 0018-9197. doi:10.1109/3.59657.

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Strained-layer InGaAs-GaAs single-quantum-well buried-heterostructure lasers were fabricated by a hybrid beam epitaxy and liquid-phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L=425 μm) and 0.75 mA for a coated laser (R~0.9, L=198 μm), were obtained. A 3-dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). Procedures for material preparation and device fabrication are introduced.

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Zhao, B.0000-0001-8438-9188
Additional Information:© 1990 IEEE. Reprinted with permission. Manuscript received October 27, 1989; revised February 21, 1990. This work was supported by the Defense Advanced Research Projects Agency and the Office of Naval Research. The work of S. Sanders was supported by a National Science Foundation Graduate Fellowship. T.R. Chen would like to thank J. Paslaski for helpful discussions on high-frequency modulation. The authors are also grateful to D. Armstrong for his help in many ways during the LPE growth process.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)UNSPECIFIED
Office of Naval Research (ONR)UNSPECIFIED
NSF Graduate Research FellowshipUNSPECIFIED
Subject Keywords:III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; optical workshop techniques; semiconductor growth; semiconductor junction lasers
Issue or Number:7
Record Number:CaltechAUTHORS:CHEieeejqe90
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:9937
Deposited By: Archive Administrator
Deposited On:27 Mar 2008
Last Modified:08 Nov 2021 21:03

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