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Development of Lattice-Mismatched GaInAsP for Radiation Hardness

France, Ryan M. and Espinet-González, Pilar and Haidet, Brian B. and Mukherjee, Kunal and Guthrey, Harvey L. and Atwater, Harry A. and Walker, Don (2020) Development of Lattice-Mismatched GaInAsP for Radiation Hardness. IEEE Journal of Photovoltaics, 10 (1). pp. 103-108. ISSN 2156-3381. doi:10.1109/jphotov.2019.2947555.

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We develop lattice-mismatched GaInAsP as an alternative alloy to pure As-based alloys currently used in III–V multijunction solar cells. Increasing the alloy phosphorous and indium content while maintaining an optimal bandgap may allow high efficiency multijunction devices with increased radiation hardness. Here, 1.0-eV GaInAsP is developed and implemented into single and multijunction solar cell devices. The lattice-mismatched GaInAsP must be grown strain free, and the subcell thickness must be maintained below the thickness where surface-driven phase separation occurs. As observed in transmission electron microscopy and cathodoluminescence imaging, phase separation strengthens in the GaInAsP layer and leads to interfacial defect formation when the cell thickness is too great. We show single junction 1.0-eV Ga_(0.5)In_(0.5)As_(0.7)P_(0.3) with excellent carrier collection and a bandgap-voltage offset of 0.40 V. This material quality approaches that of 1.0-eV Ga_(0.7)In_(0.3)As used in inverted metamorphic multijunction devices, but has increased phosphorus content and consequently is expected to have a higher radiation resistance. We incorporate the 1.0-eV GaInAsP subcell into a 3-junction inverted metamorphic solar cell to test the performance of the subcell in a multijunction. No additional loss is observed upon integration into a multijunction cell: both the carrier collection and voltage of the GaInAsP subcell are unchanged from single junction devices. While further materials development and radiation testing is still required, these preliminary results indicate that lattice-mismatched GaInAsP can be effectively used in multijunction solar cells to replace radiation-soft materials.

Item Type:Article
Related URLs:
URLURL TypeDescription
France, Ryan M.0000-0002-2040-4809
Espinet-González, Pilar0000-0002-7656-0077
Guthrey, Harvey L.0000-0003-1574-3379
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2019 IEEE. Manuscript received June 10, 2019; revised August 26, 2019; accepted October 8, 2019. Date of publication October 31, 2019; date of current version December 23, 2019. This work was supported in part by Northrop Grumman under the Space Solar Power Initiative, in part by The Aerospace Corporation, in part by the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308 with Alliance for Sustainable Energy, LLC, the operator of the National Renewable Energy Laboratory, and California Institute of Technology under CRADA No. CRD-17-704, and in part by MRSEC Program of the NSF under Award No. DMR 1720256. The work of B. B. Haidet was supported by the National Science Foundation (NSF) Graduate Research Fellowship under Grant 1650114.
Group:Space Solar Power Project
Funding AgencyGrant Number
Northrop Grumman CorporationUNSPECIFIED
Aerospace CorporationUNSPECIFIED
Department of Energy (DOE)DE-AC36-08GO28308
NSF Graduate Research FellowshipDGE-1650114
Subject Keywords:Gallium arsenide, photovoltaic cells, radiation hardening, III-V semiconductor materials
Issue or Number:1
Record Number:CaltechAUTHORS:20191107-072658674
Persistent URL:
Official Citation:R. M. France et al., "Development of Lattice-Mismatched GaInAsP for Radiation Hardness," in IEEE Journal of Photovoltaics, vol. 10, no. 1, pp. 103-108, Jan. 2020. doi: 10.1109/JPHOTOV.2019.2947555
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:99716
Deposited By: Tony Diaz
Deposited On:07 Nov 2019 18:12
Last Modified:16 Nov 2021 17:48

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