of 1
SI 1.
High resolution X-ray photoelectron spectra of n
+
Si microwire array (a) Si 2p region. The peak at 1
04 eV is characteristic
of thick (~500nm) silicon oxide layer located at th
e base of microwire arrays. (b) C 1s region. Peak a
t 284 eV is characteristic of
C-Si bond.
SI 2.
Microwire contact to PEDOT:PSS. Entire contacting
surface of Si microwire is embedded in PEDOT:PSS fo
rming intimate
contact.
(a)
(b)
Microwire
PEDOT:PSS