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Published September 15, 1976 | Version public
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Low-threshold room-temperature embedded heterostructure lasers

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Abstract

Room-temperature embedded double-heterostructure injection lasers have been fabricated using selective liquid phase epitaxial growth. Threshold current densities as low as 1.5 kA/cm^2 have been achieved in lasers grown through stripe windows opened in epitaxial GaAlAs masks.

Additional Information

© 1976 American Institute of Physics. Received 4 June 1976. The authors are grateful to Eric Mott for the fabrication of the laser heat sinks. Work supported by the Office of Naval Research and by the National Science Foundation Optical Communication Program.

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8626
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CaltechAUTHORS:LEEapl76

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2007-08-31
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