CaltechAUTHORS
Published May 15, 1974 | Version public
Journal Article Open

Liquid phase epitaxy of GaAlAs on GaAs substrates with fine surface corrugations

Creators

Abstract

Liquid phase epitaxy of GaAlAs was performed on GaAs fine surface corrugations. By optimizing the growth conditions, GaAlAs layers were grown successfully with only minimal meltback.

Additional Information

©1974 American Institute of Physics (Received 18 February 1974) The authors would like to thank Dr. Y. Otomo and Dr. O. Nakada of Central Research Laboratory, Hitachi Ltd., for their support of this work, T. Kajimura of the same laboratory and K. Evans of the California Institute of Technology for SEM photography, and A. Gover of the California Institute of Technology for helpful discussions.

Files

NAKapl74a.pdf

Files (323.3 kB)

Name Size Download all
md5:1922a77315d923dd95e6567ab10d4468
323.3 kB Preview Download

Additional details

Identifiers

Eprint ID
5280
Resolver ID
CaltechAUTHORS:NAKapl74a

Dates

Created
2006-10-09
Created from EPrint's datestamp field
Updated
2021-11-08
Created from EPrint's last_modified field