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Published May 1984 | Published
Book Section - Chapter Open

GaAs monolithic frequency doublers with series connected varactor diodes


GaAs monolithic frequency doublers using series connected varactor diodes have been fabricated for the first time. Output powers of 150 mW at 36.9 GHz with 24% efficiency and 300 mW at 24.8 GHz with 18% efficiency have been obtained. Peak efficiencies of 35% at output power levels near 100 mW have been achieved at both frequencies. Both K-band and Ka-band frequency doublers are derived from a lower power, single-diode design by series connection of two diodes and scaling to achieve different power and frequency specifications. Their fabrication was accomplished using the same process sequence.

Additional Information

© 1984 IEEE. Reprinted with permission. This work was sponsored by the Department of the Army. The authors wish to thank J.S. Gatley, M.C. Giles, J. Reinold, and L.A.C. Wright for assistance in mask layout, K.M. Molvar for expertise in the fabrication of monolithic circuits, R.C. Brooks for the design of fixtures for ion implantation, J.D. Woodhouse for contributions in ion implantation and J.J. Lambert and N. Usiak for special efforts in the packaging of the monolithic circuits.

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