Published September 1, 1983
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Selective low-temperature mass transport in InGaAsP/InP lasers
Abstract
A low-temperature mass transport process in InP was investigated. Mass transport of InP was achieved at 570–600 °C in a closed ampoule using iodine or InI as a catalytic transporting agent. Accomplishing the mass transport process at lower temperature has eliminated the problem of thermal etching and resulted in lasers with higher T0.
Additional Information
© 1983 American Institute of Physics. Received 10 February 1983; accepted 7 June 1983. This work is supported by the National Science Foundation and the Office of Naval Research.Files
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- 8824
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- CaltechAUTHORS:HASapl83
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2007-09-20Created from EPrint's datestamp field
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