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Published October 28, 2005 | Version Published
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Nanomechanical Measurement of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

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Abstract

A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

Additional Information

© 2005 The American Physical Society (Received 5 May 2005; published 28 October 2005) This work was supported by DARPA under grant No. DSO/SPINS-MDA 972-01-1-0024. K.D.G. acknowledges support as research assistant of the Research Fund Flanders (FWO).

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Eprint ID
1227
Resolver ID
CaltechAUTHORS:MASprl05

Funding

Defense Advanced Research Projects Agency (DARPA)
MDA 972-01-1-0024
Fonds Wetenschappelijk Onderzoek (FWO)

Dates

Created
2006-01-05
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Updated
2021-11-08
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