Published March 1, 1965
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Journal Article
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Injection mechanisms in GaAs diffused electroluminescent junctions
Abstract
Injection mechanisms responsible for the electroluminescence in GaAs diffused diodes are studied by examining the behavior of the emission peaks as a function of injection level, doping level, temperature, and depletion-layer widths. Three different injection mechanisms seem to be operative in providing radiation at near-band-gap energies. Models for two of these are proposed and tested. The nature of the third emission remains an open question.
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©1965 The American Physical Society. Received 25 September 1964.Files
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- 7213
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- CaltechAUTHORS:LEIpr65
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2007-01-18Created from EPrint's datestamp field
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2021-11-08Created from EPrint's last_modified field