Published February 16, 2004
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Ultralow-threshold erbium-implanted toroidal microlaser on silicon
Abstract
We present an erbium-doped microlaser on silicon operating at a wavelength of 1.5 mum that operates at a launched pump threshold as low as 4.5 muW. The 40 mum diameter toroidal microresonator is made using a combination of erbium ion implantation, photolithography, wet and dry etching, and laser annealing, using a thermally grown SiO2 film on a Si substrate as a starting material. The microlaser, doped with an average Er concentration of 2x10^(19) cm(-3), is pumped at 1480 nm using an evanescently coupled tapered optical fiber. Cavity quality factors as high as 3.9x10^(7) are achieved, corresponding to a modal loss of 0.007 dB/cm, and single-mode lasing is observed.
Additional Information
Copyright © 2004 American Institute of Physics. Received 6 November 2003; accepted 15 December 2003. The Dutch part of this work is part of the research program of FOM, which is financially supported by NWO. The work at Caltech was funded by the NSF, DARPA and the Caltech Lee Center for Advanced Networking. Mark Brongersma is gratefully acknowledged for experiments in the early phase of this work. A.P. gratefully acknowledges the hospitality of both the Atwater and Vahala groups during his sabbatical stay at Caltech.Files
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