Welcome to the new version of CaltechAUTHORS. Login is currently restricted to library staff. If you notice any issues, please email coda@library.caltech.edu
Published 1984 | Published
Book Section - Chapter Open

Strain and Damage Measurements in Ion Implanted Al_xGa_(1−x)As/GaAs Superlattices


Strain measurements in Al_xGa_(1−x) As/GaAs superlattices have been carried out before and after Si ion implantation. For doses up to 5 × 10^(15) cm^(−2), no atomic intermixing of the sublayers is observed by backscattering spectrometry. However, with x-ray rocking curve measurements, significant changes in the strain profiles are detected for implantations with doses as low as 7 × 10^(12) cm^(−2). Interpretation of the rocking curves suggests that low-dose implantations release strain in the Al_xGa_(1−x) As sublayers. The strain profile recovery of the implanted samples, upon annealing at ∼ 420°C, implies that the damage caused by implantation is largely reversible.

Additional Information

© 1985 Materials Research Society. The authors thank Y. C. M. Yeh, D. A. Smith, and A. Mehta at Applied Solar Energy Corporation for supplying the as-grown samples. Partial financial support by the Office of Naval Research under contract N00014-84-C-0736 through Rockwell International is acknowledged as well.

Attached Files

Published - Strain_and_damage_measurements_in_ion_implanted.pdf


Files (1.3 MB)

Additional details

August 19, 2023
January 13, 2024