Published June 1, 1983
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Electrical characteristics of amorphous iron-tungsten contacts on silicon
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Abstract
The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities, pc=1×10^−7 and pc=2.8×10^−6, were measured on n+ and p+ silicon, respectively. These values remain constant after thermal treatment up to at least 500°C. A barrier height, φBn=0.61 V, was measured on n-type silicon.
Additional Information
© 1983 American Institute of Physics. Received 4 February 1983; accepted 22 March 1983. The authors thank Bai-Xin Liu (Caltech) for the x-ray observations, D. Rutledge (Caltech) for the access to the photolithographic facilities, and P. Iles and F. Ho (Applied Solar Energy Corporation) for supplying some of the test wafers. This work originated as a project funded by the Caltech Summer Undergraduate Research Fellowship program (F. Shair, S.P. Krown, and C. Merkel); the completion of this work was financially supported in part by the U.S. Department of Energy through an agreement with the National Aeronautics and Space Administration and monitored by the Jet Propulsion Laboratory, California Institute of Technology (D.B. Bickler).Files
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