Published January 15, 1985
| Version public
Journal Article
Open
Low-temperature ion beam mixing of Pt and Si markers in Ge
Abstract
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperatures between 6 and 500 K. The low-temperature measurements show that the mixing parameter for Pt is nearly twice that for Si. This result is in strong contradiction to the collisional theory of ion beam mixing. A weak temperature dependence in the mixing is found for both markers.
Additional Information
Copyright © 1985 American Institute of Physics (Received 26 March 1984; accepted 24 October 1984) This work was supported by the U.S. Department of Energy.Files
KIMapl85.pdf
Files
(357.5 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:cfd2dcc36297d24999d69068b0035c71
|
357.5 kB | Preview Download |
Additional details
Identifiers
- Eprint ID
- 5565
- Resolver ID
- CaltechAUTHORS:KIMapl85
Dates
- Created
-
2006-10-25Created from EPrint's datestamp field
- Updated
-
2021-11-08Created from EPrint's last_modified field